Scheduled presentations:

• Effect of Thickness on the Resistive Switching Characteristics of Pt/Ag/HfO2/W MIMStacks
  T. del Val (University of Valladolid), K. Kalam (University of Tartu), G. Vinuesa (University of Valladolid), H. García (University of Valladolid), M. Bargalló González (IMB-CSIC), F. Campabadal (IMB-CSIC), *H. Castán (University of Valladolid), S. DUEÑAS (University of Valladolid)
• Role of the Buffer Layer in the Performance of Halide Perovskite Memristors
  J. Pérez Martínez (URJC), D. Martín Martín (URJC), *B. Arredondo (URJC), B. Romero (URJC)
• Study of the Resistive Switching Properties of Silicon Nitride with Embedded Silicon Nanocrystals
  *A. Vazquez (INAOE), M. Moreno (INAOE), A. Morales (INAOE)
• High-linearity tuning and evaluation method based on program levels characteristics of analog memristor
  *Z. Diao (Osaka university), R. Yamamoto (Osaka university), Z. Meng (Osaka university), T. Tohei (Osaka university), A. Sakai (Osaka university)
• Fully Inkjet-Printed Memristors Based on Cross-Linked Poly(4-vinylphenol) Insulating Layer
  L. Navarro (Institut de Microelectrònica de Barcelona), C. Ferreyra (Institut de Microelectrònica de Barcelona), S. Pérez (Institut de Microelectrònica de Barcelona), E. Ramon (Institut de Microelectrònica de Barcelona), F. Campabadal (Institut de Microelectrònica de Barcelona), M. B. Gonzalez (Institut de Microelectrònica de Barcelona), *C. Martínez-Domingo (Institut de Microelectrònica de Barcelona)
• Resistive Switching Behavior, Variability, and Stability in Ti/HfO₂ and Ti/HfO₂/Al₂O₃-Based Memristors
  *Z. SU (IMB-CNM), C. FERREYRA (IMB-CNM), E. RAMON (IMB-CNM), F. CAMPABADAL (IMB-CNM), M. B. GONZÁLEZ (IMB-CNM)
• Memcapacitor Emulator Using Commercial Memristors
  F. Romero (University of Granada), C. Guijosa (University of Granada), D. Morales (University of Granada), N. Rodriguez (University of Granada), *J. Roldan (University of Granada)
• Enhancing memristor-based neural network accuracy using a variability reduction technique
  A. Cantudo (Universidad de Granada), *J. Roldan (Universidad de Granada), M. Villena (Universidad de Granada), F. Jimenez-Molinos (Universidad de Granada)
• Scalability and ON/OFF Ratio Performance of HFO2-based Resistive Random Access Memories
  *S. Guitarra (Universidad San Francisco de Quito)
• Effect of the Layers Thickness on the Stability of TiN/Ti/HfO2/W Memristors
  *M. Villena (Universidad de Granada), A. Cantudo (Universidad de Granada), F. Jiménez-Molinos (Universidad de Granada), M. Bargalló (nstitut de Microelectronica de Barcelona CNM), F. Campabadal (nstitut de Microelectronica de Barcelona CNM), J. Roldán (Universidad de Granada)
• Stanford Model Parameter Fitting Of Experimental I-V Curves Using A Genetic Algorithm
  *D. Maldonado (Universidad Rey Juan Carlos), A. Cantudo (Universidad de Granada), M. Bargallo (Institut de Microelectronica de Barcelona), F. Campabadal (Institut de Microelectronica de Barcelona), F. Jimenez Molinos (Universidad de Granada), J. Roldan (Universidad de Granada)
• The Commutative Problem in Vector Matrix Multiplications based on Memristive Crossbar Architectures
  A. de Gracia Herranz (UPM), *M. Villacañas Rebollo (UPM), M. López Vallejo (UPM)
• Optimizing HfO₂ Memristors with an Al₂O₃ Barrier: Toward Reliable Non-Volatile Memory
  *M. Shooshtari (Instituto de Microelectrónica de Sevilla, IMS), F. CAMPABADAL (Instituto de Microelectrònica de Barcelona, I), B. LINARES-BARRANCO (Instituto de Microelectrónica de Sevilla, IMS)
• A RRAM model based on a Kinetic Monte Carlo description of filamentary switching in TiN/Ti/Al2O3/W memristors
  *A. López Torres (UGR)
• Experimental validation of small-signal memristor models: linking jacobian dynamics to frequency-domain response
  *M. Gater (School of Physics & Astronomy, University of Nottingham), R. Picos (Industrial Eng. Dept, Universitat de les Illes Balears), C. de Benito (Industrial Eng. Dept, Universitat de les Illes Balears), O. Camps (Industrial Eng. Dept, Universitat de les Illes Balears), S. G. Stavrinides (Physics Dept, Democritus University of Thrace), A. Adawi (Faculty of Physics, University of Hull), N. T. Kemp (School of Physics & Astronomy, University of Nottingham), L. O. Chua (Dept. of Electrical Eng. and Computer Sciences, University of California)