This work focuses on the development of resistive switching (RS) devices based on silicon nitride (Si3N4) and Si3N4 with embedded silicon nanocrystals (Si-NCs) as RS layer and using metal-insulator-semiconductor (MIS)-like structures. 20 nm thick Si3N4 and a stack layers of Si3N4/Si/Si3N4 (10 nm/5 nm/5 nm) were deposited on highly doped (0.01-0.02 Ω-cm) p-type silicon substrate. Si-NCs in the Si3N4/Si-NCs/Si3N4 were formed after a thermal annealing at 1100°C, which was confirmed by Raman spectroscopy. The average size of Si-NCs was about 3 nm. Indium tin oxide (ITO) was used as top electrode with area of 6.25×10-4 cm2. Current-voltage (I-V) and current-voltage-time (I-V-t) curves were carried out with a Keithley 4200-SCS system. Devices based on the Si3N4 exhibited a chaotic behavior and higher operating voltages (FORMING, SET and RESET) as compared to the device containing Si-NCs. Si3N4–based memristors exhibit SET and RESET voltages of about 3.97V and -1.75 V, respectively, while these values reduced to 3.47±0.65V (SET) and -1.53±0.17V (RESET) for Si3N4/Si-NCs/Si3N4. Resistance values of about values of 665±1.67GΩ and 17.94±1.49KΩ were obtained for high resistance state (HRS) and low resistance state (LRS), respectively, as calculated from 20 direct current (DC) switching cycles. The I-V-t measurements demonstrated that these devices can stably retain data for a period of 104 seconds. Likewise, these memristors showed LRS/HRS ratio of 7 orders of magnitude, demonstrating the advantage of the Si-NCs incorporation into the RS matrix.