Experimental validation of small-signal memristor models: linking jacobian dynamics to frequency-domain response
Please login to view abstract download link
This paper introduces a unified theoretical and experimental framework for constructing the small-signal model of memristive devices from first principles. By analyzing the Jacobian of the memristor’s governing equations — governing both resistance r(x) and state dynamics f(x,vM) — we establish a direct link to its frequency-domain impedance characteristics. The derived model reveals a unique pole-zero structure in the small-signal response, distinguishing memristors from conventional resistors, capacitors, and inductors in the fundamental hierarchy of circuit elements. Experimentally, we fabricate and characterize PEO-based memristor crossbar devices, observing pinched hysteresis in DC IV curves and frequency-dependent impedance profiles that align with theoretical predictions. Bode plot analysis further confirms the Jacobian-dependent pole and zero locations, with consistent validation across devices and input amplitudes. Our approach provides a general methodology for probing internal state dynamics (dx/dt) without prior assumptions about physical mechanisms, offering valuable insights for memristor characterization and compact modeling.