In the last decade, memristors using metal halide perovskites (MHP) have garnered significant scientific interest. These materials display an unusual hysteresis in the current–voltage curve, primarily attributed to ion migration among other factors, that is beneficial for resistive switching phenomena [1]. As a result, MHPs have become promising candidates for active layers in memory devices thanks to their intrinsic properties such as rapid ion migration, adjustable bandgap, cost-effective production, long carrier diffusion length, flexibility. Moreover, MHPs exhibit high photosensitivity and absorption coefficient making them ideal for photonic memristor devices [2-3]. Despite their remarkable properties, hybrid perovskites still have major challenges that hinder their large-scale industrial application, with fast degradation under ambient conditions being the most critical. In addition, hybrid perovskites are highly reactive semiconductors that easily interact with surrounding materials, leading to partially irreversible chemical reactions. In MAPbI3 perovskite memristors, these interactions occur between iodine ions (I-) and metal electrode ions (such as Ag+), leading to irreversible processes that degrade the performance and stability of the device [4]. Therefore, it is essential to develop methods to regulate these chemical reactions to enhance the performance of perovskite-based memristors, such as incorporating buffer layers between the perovskite layer and the reactive electrode. These layers act as a physical barrier controlling the chemical reactions. In this work, MAPbI3 perovskite memristors with different buffer layers have been manufactured. I-V characteristics (Fig. 1), endurances (Fig. 2) and retention times (Fig. 3) have been measured for three different buffer layers. Results reveal that devices with the PMMA buffer layer show the best performance in terms of ON/OFF ratio, endurance and retention time. In addition, a comprehensive study of these devices has established an operating mechanism for perovskite-based memristors with a buffer layer.