Memristive devices
Chaired by:
Prof. Jordi Suñé (Universitat Autònoma de Barcelona , Spain)
Prof. Jordi Suñé (Universitat Autònoma de Barcelona , Spain)
Scheduled presentations:
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Current Driven Exploration of h-BN based Inkjet-Printed ReRAM: New Opportunities for Endurance, Computation in Memory and Security Applications
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The role of the Ti/HfO₂ thickness ratio in the resistive switching characteristics: experimental and simulation study
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Stochastic Resonance in RRAM Devices Subjected to Dynamic Input Voltages
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Comprehensive Analysis of Complementary Resistive Switching in Ti/HfO₂-Based Memristive Systems