Scheduled presentations:

• Current Driven Exploration of h-BN based Inkjet-Printed ReRAM: New Opportunities for Endurance, Computation in Memory and Security Applications
  P. Aran Vila (Universitat de Barcelona), F. Palacio-Bonet (Universitat de Barcelona), G. Vescio (Universitat Politècnica de Catalunya), S. Hernández (Universitat de Barcelona), B. Garrido (Universitat de Barcelona), *A. Cirera (Universitat de Barcelona)
• The role of the Ti/HfO₂ thickness ratio in the resistive switching characteristics: experimental and simulation study
  *M. Saludes (IMB-CNM CSIC), F. Campabadal (IMB-CNM CSIC), E. Miranda (UAB), M. Bargalló (IMB-CNM CSIC)
• Stochastic Resonance in RRAM Devices Subjected to Dynamic Input Voltages
  *E. Salvador (UAB), R. Rodriguez (UAB), E. Miranda (UAB), A. Rubio (UPC), A. Crespo-Yepes (UAB), J. Martin-Martinez (UAB), M. Nafria (UAB)
• Comprehensive Analysis of Complementary Resistive Switching in Ti/HfO₂-Based Memristive Systems
  *C. Ferreyra (IMB-CNM (CSIC)), F. Campabadal (IMB-CNM (CSIC)), M. Bargalló González (IMB-CNM (CSIC))