Comprehensive Analysis of Complementary Resistive Switching in Ti/HfO₂-Based Memristive Systems
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In this study, the Complementary Resistive Switching (CRS) phenomenon has been thoroughly investigated in TiN/Ti/HfO₂/W and TiN/Ti/HfO₂/Al2O3/W-based memristors using two memristive cells in a back-to-back configuration in each system1,2,3. Initially, after the forming process was completed, the performance and reliability of each individual cell were validated through multiple switching cycles (Fig. 1). Subsequently, the CRS behavior was evaluated over thousands of cycles (Fig. 2a-b). Additionally, three-terminal measurements were performed (Fig. 1c), allowing for a precise, real-time assessment of each cell contribution to the overall resistance during CRS operation (Fig. 2c). The influence of the maximum applied voltage4 and temperature on both the CRS systems and their individual cells were also thoroughly analyzed. These findings offer valuable insights into the dynamic behavior of CRS systems and the fundamental mechanisms underlying their switching cycles.