This work introduces three different approaches to analyse the impact of the addition of external noise to HfO2-based RRAM devices subjected to dynamic voltages. The first setup consisted in connecting a pulse generator (Keysight 81150A) to the memristor top electrode and a high-definition oscilloscope (Keysight MSOS254A) to the bottom electrode. The input signal is a triangular signal of 10 Hz frequency and 1.4 V amplitude, with and without added noise. The mean resistance ratio (extracted at a fix voltage value from the I-V curves) as a function of the noise σ (Fig. 1a) and the corresponding CDFs (Fig.1b) show that the typical SR curve was obtained with higher resistance ratio for the noisy cases [1], [2]. The second setup combines the SPA Keithley 4200A-SCS, connected to the memristor top electrode, and the Keysight 81150A pulse generator to the bottom electrode. 50 Hz and 1 kHz pulses (see Fig. 2a) were applied. Figure 2b shows the mean resistance ratio for each of the analysed noise σ and pulse frequency. While the stochastic resonance curves were obtained for both frequencies, higher frequencies are associated with lower resistance ratio values. The third setup uses the Keysight 81150A pulse generator (top electrode) and the SPA Agilent 4156C (bottom electrode). 1 Hz, 1 kHz, 10 kHz and 100 kHz pulses (Fig.3a), with and without added noise were applied. As the frequency increases, the memristor is subjected to a shorter input signal, thereby reducing the impact of noise (Fig. 3b). At 100 kHz, there is no discernible difference between the noisy and noise-free experiments, illustrating the minimal effect of noise at such high frequencies. This third approach considered to study the impact of external noise on memristor performance was the most solid and stable. The obtained results suggest that, for the samples investigated in this work, the positive noise influence drops as the frequency increases.