Inkjet-printing electronics is an emerging technology with expected impact on applications like displays, photovoltaics, lighting, radiofrequency identification and security due to the facility to explore new materials [1]. The incorporation of 2D- materials could enhance the properties or even enable new applications [2]. In this presentation, we present the exploration of h-BN based inkjet print ReRAMs [4] were some usual stochastic phenomena are observed [2,3], among them dispersion in electrical parameters, ReRAM variability, and random telegraph noise current fluctuation, as entropy source for data encryption [4]. Details of the inkjet printing process and inkjet printed film printed characterization are shown. We also introduce ReRAM electrical characterization as well as endurance test of pulse operation with different current limitation of Ag/h-BN/Au devices. We demonstrate the feasibility of current-driven ReRAM operations via fine control of current levels in the nA and µA range [5]. Besides operating constantly at low current levels and in the presence of variability, the presented results demonstrated a gradually achieved stable and repeatable cycling performance, with the memory capacity of the devices remaining coherent for both periodic and nonperiodic stimuli. The use of current driven h-BN inkjet printed devices open new opportunities for both computation in memory and security applications that are discussed. References [1] G. Vescio, et al. Low-power, high-Performance, non-volatile inkjet-printed HfO2‑based resistive random access memory: From Device to Nanoscale Characterization, ACS Appl. Mater. Interfaces 2019, 11, 23659. [2] M. Lanza, et al. Memristive technologies for data storage, computation, encryption, and radio-frequency communication. Science 2022, 376, 10. [3] M. Lanza, et al. Standards for the characterization of endurance in resistive switching devices. ACS Nano 2021 15, 17214–17231. [4] K. Zhu, et al, Inkjet-printed h-BN memristors for hardware security, Nanoscale 2023. [5] A. Cirera, et al, Effective Current-Driven Memory Operations for Low-Power ReRAM Applications, IEEE Access 2023, 11, 51260