MEMRISTORS 2025

Environmental Impacts of Memristors Production

  • Serrano-Luján, Lucia (Universidad Rey Juan Carlos)
  • Benito-Porras, Nerea (Universidad Rey Juan Carlos)
  • Pérez-Martínez, Jose Carlos (Universidad Rey Juan Carlos)
  • Lao-Zea, Ángela (CIEMAT)
  • Urbina, Antonio (Universidad Pública de Navarra)
  • Roldan, Juan Bautista (Universidad de Granada)

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Due to their unique properties, memristors are emerging as key components in advanced technologies. Their applications include non-volatile memory, neuromorphic computing, hardware cryptography, and radiofrequency switches. One of the most promising uses is in AI acceleration through In-Memory Computing, addressing energy-intensive data centre demands and overcoming the von Neumann bottleneck1–6. Different types of memristors exist, classified by operational mechanisms, structure, and materials. Examples include Phase Change Memories (PCM), which switch between amorphous and crystalline states7; Magnetic RAMs (MRAMs); Ferroelectric FETs (FFETs); and Resistive RAMs (RRAMs), where conductive nanofilaments influence charge conduction8,9. RRAMs, widely used in commercial circuits by companies like TSMC and Intel10,11, offer retention, endurance, and scalability advantages. However, challenges remain in variability control12, simulation, and compact modelling to enhance industrial viability. Beyond performance, the environmental impact of memristor production must be assessed. A full Life Cycle Assessment (LCA) evaluates materials, energy consumption, and end-of-life processes. Sustainable large-scale production requires identifying critical materials and processes that affect human health and the environment. While memristors may replace Flash memory, their widespread adoption depends on developing eco-friendly manufacturing strategies guided by LCA methodologies under ISO 14040-44 standards13. In this study, we have applied LCA methodology to 1 mm2 of three memristor technologies: • The M1 memristor active layer comprises hybrid perovskite (methyl-ammonium lead iodide, CH3NH3PbI3, or MAPbI3) with gold or silver and FTO electrodes. • The M2 memristor has an active layer made of HfO2, and its electrodes are made of Si-doped wafer and gold. • M3 device active layer consists of a tri-layer structure composed of Al₂O₃/HfO2/Al₂O₃. The electrodes are made of TiN, silicon and platinum. Our results point out that the main contributor to environmental and human health impacts is the top electrode layer, with large room for improvement resulting from an up-scaling of production routes towards the industrial level. Special focus has been put on evaluating greenhouse gas (GHG) emissions and resource depletion resulting from all materials and processes. The assessment of the impacts has enabled us to identify the greenest configuration of the devices.